| VFSHAYQ 7 www'V'Shay'C°m Vishay General Semiconductor 100 5 .0 E 100 § 3 3u) E 5 I II E ‘G O ‘ M ”' %I0 8 — (E) 2 .9 m 0 i S ‘E j 2 II N 3 E Pulse Wldm : 300 (Is -J E -0.01 ‘O02 0.4 0.6 0.6 1.0 12 (.4 OJ ‘ '0 ‘O0 lnstanlaneous Forward Voltage (V) Reverse Vonage (V) Fig. 3 - Typical Instantaneous FonNard Characteristics Fig. 5 - Typical Junction Capacitance 10003E 1005 03 1021':5IIn 13oai:(E E 0.1 Ew --..- E IIIIII 001 ---‘- Percent 01 Rated Peak Reverse Vollage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (miiiimeters) Do-214AB (SMC) C m d B da O 9 an Mounting Pad Layout T + + o.185(4.69) MAX. 0.120 (3.20) 0.246 (6.22) I I 0.114 (2.90) 0.220 (5.59) fi 0.126 (320) MW. — 0.280 (7.11) ‘ 0260 (e_6o) ’ 0.060 (1.52) MIN. + + * f 0.012 (0.305) 11 0.006 (0.152) + 0.320 (8.13) REF. 0.103 (2.02) 0.079 (2.06) 0.000 (1.52): if +0008 (0.2) 0.030 (0.76) 0(0) 0.320 (8.13) 0.305 (7.75) Revision: 19-Aug-13 3 Document Number: 88931 For technical questions within your region: DiogesArnericas@vishay.corn, DiogesAsia@vishay.com, DiodesEurope@Vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vish . m d c?9100 |